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DFN1006封裝系列ESD保護(hù)器具有反應(yīng)速度快，導(dǎo)通電壓低、體積小、集成度高、同時(shí)實(shí)現(xiàn)多條數(shù)據(jù)線保護(hù)，電容值較低，是理想的高頻數(shù)據(jù)保護(hù)器件，多樣化封裝,完全可實(shí)現(xiàn)在不同位置、空間上靈活的集成化ESD保護(hù)。
封裝：DFN-1006
| Part No. | VRWM .max (V) | VBR .min (V) | CJ .typ (pF) | Ppp @8/20μs (W) | Ipp @8/20μs (A) | IR .max (μA) | Contact (kV) | Channel | Inner Diagram | Package | |
| JEN1006-5V | 5 | 6 | 60 | 100 | 8 | 0.2 | ±30 | 1 |  | DFN1006 |  |
| JEN1006-15V | 15 | 16.5 | 50 | 320 | 10 | 0.2 | ±30 | 1 | | DFN1006 | |
| JEN1006-3.3V-C | 3.3 | 5 | 10 | 72 | 8.5 | 0.1 | ±30 | 1 |  | DFN1006 | |
| JEN1006-4.5V-C | 4.5 | 4.8 | 100 | 400 | 40 | 0.2 | ±30 | 1 | | DFN1006 | |
| JEN1006-5V-C | 5 | 5.6 | 15 | 80 | 8 | 0.1 | ±30 | 1 | | DFN1006 | |
| JEN1006-7V-C | 7 | 7.5 | 15 | 80 | 8 | 0.1 | ±30 | 1 | | DFN1006 | |
| JEN1006-9V-C | 9 | 10 | 15 | 100 | 5 | 0.2 | ±25 | 1 | | DFN1006 | |
| JEN1006-12V-C | 12 | 13.3 | 7.5 | 100 | 5 | 0.2 | ±30 | 1 | | DFN1006 | |
| JEN1006-5V-LC | 5 | 5.6 | 3.5 | 40 | 2.5 | 0.1 | ±20 | 1 | | DFN1006 | |
| JEN1006-12V-LC | 12 | 13.3 | 7.5 | 100 | 5 | 0.2 | ±30 | 1 | | DFN1006 | |
| JEN1006-5V-UL | 5 | 6.0 | 0.8 | 80 | 5 | 0.5 | ±20 | 1 | | DFN1006 | |
| JEN1006-3.3V-ULC | 3.3 | 3.5 | 0.6 | 50 | 10 | 0.2 | ±30 | 1 | | DFN1006 | |
| JEN1006-5V-ULC | 5 | 6 | 0.3 | 110 | 5 | 0.1 | ±20 | 1 | | DFN1006 | |
| JEN1006-12V-ULC | 12 | 13.3 | 0.25 | 80 | 2.5 | 0.2 | ±20 | 1 | | DFN1006 | |
| JEN1006-24V-ULC | 24 | 26.5 | 0.3 | 80 | 1.5 | 0.5 | ±8 | 1 | | DFN1006 | |
VRWM：Reverse Working Voltage
VBR：Snap-Back Voltage
CJ：Junction Capacitance
Ppp：Peak Pulse Power
Ipp：Peak Pulse Current
IR：Reverse Leakage Current
Contact：IEC 61000-4-2;Contact Discharge
